<?xml version="1.1" encoding="utf-8"?>
<article xsi:noNamespaceSchemaLocation="http://jats.nlm.nih.gov/publishing/1.1/xsd/JATS-journalpublishing1-mathml3.xsd" dtd-version="1.1" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"><front><journal-meta><journal-id journal-id-type="publisher-id">ME</journal-id><journal-title-group><journal-title>Modern Engineering</journal-title></journal-title-group><issn>2996-6973</issn><eissn>2996-6981</eissn><publisher><publisher-name>Art and Technology</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.61369/ME.7021</article-id><article-categories><subj-group subj-group-type="heading"><subject>Article</subject></subj-group></article-categories><title>微波电光调制器的封装设计</title><url>https://artdesignp.com/journal/ME/1/2/10.61369/ME.7021</url><author>崇毓华,曹继明,田朝辉</author><pub-date pub-type="publication-year"><year>2024</year></pub-date><volume>1</volume><issue>2</issue><history><date date-type="pub"><published-time>2024-04-20</published-time></date></history><abstract>本文针对一种高频微波电光调制器，重点讨论和研究了其射频封装、光耦合封装，以及封装实现工艺。首先介绍了高速硅基光调制器的工作原理和整体封装设计。针对射频封装，建立了完整的射频仿真流程。针对GCPW 射频过渡形式，综合考虑微波传输线过渡设计、金丝过渡仿真以及阻抗匹配设计，完成了40GHz 带宽射频过渡GSG 设计。详细讨论对比了光纤垂直耦合和水平耦合两种类型的优缺点，采用了剖面高度更低的水平耦合实现一个硅基调制器芯片光学耦合封装，操作简单、易于实现，封装管壳结构强度高、实用性强。</abstract><keywords>电光调制器，阻抗匹配，射频封装，光耦合</keywords></article-meta></front><body/><back><ref-list><ref id="B1" content-type="article"><label>1</label><element-citation publication-type="journal"><p>[1]Soref R. A. The past, present, and future of silicon photonics. IEEE Journal of Selected Topics in QuantumElectronics 12, 1678-1687 (2006).[2]Chagnon M. et al. Experimental study of 112 Gb/s short reach transmission employing PAM formats and SiPintensity modulator at 1.3 um. Optics Express 22, 21018-21036 (2014).[3]Streshinsky M. et al. Low power 50 Gb/s silicon traveling wave Mach-Zehnder modulator near 1300 nm. OpticsExpress 21, 30350-30357 (2013).[4]Ding J. et al. Low-voltage, high-extinction-ratio, Mach-Zehnder siliconoptical modulator for CMOS-compatibleintegration, Optics Express 20, 3209-3218 (2012).[5]Dong P., Chen L., and Chen Y.-K., High-speed low-voltage single-drive pushpull silicon Mach-Zehnder modulators,Optics Express 20, 6163-6169 (2012).[6]Zhou Y. et al. Modeling and optimization of a single-drive push-pull silicon Mach-Zehnder modulator. PhotonicsResearch 4, 153-161 (2016).[7] 夏雨楠．先进射频封装技术发展面临的挑战．电子与封装16, 1681-1070 (2016).[8] 汪金华，刘亚东，宣扬，等．一种前沿高速硅基光调制器的封装优化设计．混合微电 子技术 26, 6 (2015).[9] 汪冰，黄平，杨磊．高速光调制器的发展与封装技术研究．电子与封装13, 003, 2013.[10] 祝宁华著．光电子器件微波封装和测试．科学出版社，2011.</p><pub-id pub-id-type="doi"/></element-citation></ref></ref-list></back></article>
